MB84VD23581FJ-70 Datasheet, PDF (10/56 Pages) SPANSION – 64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM

MB84VD23581FJ-70
(Continued)
Parameter
Symbol
Input Low Level
VIL
Input High Level
VIH
Voltage for Autoselect and
Sector Protection (RESET) *⁷
VID
Test Conditions
—
—
Flash
FCRAM
—
Min
–0.3
2.0
2.2
Value
Unit
Typ Max
—
0.5 V
VCCf+0.3
—
V
VCCr+0.3
11.5 — 12.5 V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
FCRAM Output Low Level
FCRAM Output High Level
Flash Output Low Level
Flash Output High Level
Flash Low VCC Lock-Out
Voltage
VACC
—
VOL VCCr = VCCr Min, IOL =1.0 mA
VOH VCCr = VCCr Min, IOH = –0.5 mA
VOL VCCf = VCCf Min, IOL = 4.0 mA
VOH VCCf = VCCf Min, IOH = –0.1 mA
VLKO
—
8.5 9.0 9.5 V
—
—
2.2 —
—
—
VCCf–0.4 —
0.4 V
—V
0.45 V
—V
2.3 2.4 2.5 V
*1 : All voltage are referenced to VSS.
*2 : FCRAM DC characteristics are measured after following POWER-UP timing.
*3 : IOUT depends on the output load conditions.
*4 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*5 : ICC active while Embedded Algorithm (program or erase) is in progress.
*6 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*7 : Applicable for only VCC applying.
*8 : Embedded Algorithm (program or erase) is in progress. (@5 MHz)
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