MB84VD23581FJ-70 Datasheet, PDF (38/56 Pages) SPANSION – 64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM

MB84VD23581FJ-70
• POWER DOWN and POWER DOWN PROGRAM PARAMETERS (FCRAM)
Parameter
Symbol
Value
Min
Max
CE2r Low Setup Time for Power Down Entry
tCSP
10
—
CE2r Low Hold Time after Power Down Entry
tC2LP
70
—
CE1r High Hold Time following CE2r High after
Power Down Exit (SLEEP mode only)
tCHH
350
—
CE1r High Setup Time following CE2r High after
Power Down Exit (Except for SLEEP mode)
tCHHN
1
—
CE1r High Setup Time following CE2r High after
Power Down Exit
tCHS
10
—
CE1r High to PE Low Setup Time
tEPS
70
—
PE Power Down Program Pulse Width
tEP
70
—
PE High to CE1r Low Hold Time
tEPH
70
—
Address Setup Time to PE High
tEAS
15
—
Address Setup Time from PE High
tEAH
0
—
* : Applicable to Power Down Program.
Unit Note
ns
ns
µs
µs
ns
ns
*
ns
*
ns
*
ns
*
ns
*
• OTHER TIMING PARAMETERS (FCRAM)
Parameter
Symbol
Value
Min
Max
Unit Note
CE1r High to OE Invalid Time for Standby Entry
tCHOX
10
—
ns
CE1r High to WE Invalid Time for Standby Entry tCHWX
10
CE2r Low Hold Time after Power-up
tC2LH
50
CE2r High Hold Time after Power-up
tC2HL
50
CE1r High Hold Time following CE2r High after
Power-up
tCHH
350
Input Transition Time
tT
1
—
ns
*1
—
µs
*2
—
µs
*3
—
µs
*2
25
ns
*4
*1 : It may write some data into any address location if tCHWX is not satisfied.
*2 : Must satisfy tCHH(Min) after tC2LH(Min).
*3 : Requires Power Down mode entry and exit after tC2HL.
*4 : The input Trasition Time(tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns, it may violate
AC specification of some timing parameters.
• AC TEST CONDITIONS (FCRAM)
Description
Symbol
Input High Level
VIH
Input Low Level
VIL
Input Timing Measurement Level
VREF
Input Transition Time
tT
Test Setup
VCCr = 2.7 V to 3.1 V
VCCr = 2.7 V to 3.1 V
VCCr = 2.7 V to 3.1 V
Between VIL and VIH
Value
2.3
0.4
1.3
5
Unit Note
V
V
V
ns
37