MB84VD23581FJ-70 Datasheet, PDF (52/56 Pages) SPANSION – 64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM

MB84VD23581FJ-70
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Value
Unit
Min
Typ
Max
Remarks
Sector Erase Time
—
0.5
2
s
Excludes programming time
prior to erasure
Word Programming Time
—
6
100
µs
Excludes system-level
overhead
Chip Programming Time
—
25.2
95
s
Excludes system-level
overhead
Erase/Program Cycle
100,000
—
—
cycle
Note : Typical Erase conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Typical Program conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Data= Checker
s DATA RETENTION Low VCCr Characteristics (FCRAM)
Parameter
VCCr Data Retention Supply Voltage
VCCr Data Retention Supply Current
Data Retention Setup Time
Symbol
Test Conditions
VDR
CE1r = CE2r ≥ VCCr – 0.2 V or,
CE1r = CE2r = VIH
2.3 V ≤ VCCr ≤ 2.7V,
IDR
VIN = VIH* or VIL,
CE1r = CE2r = VIH*, IOUT=0 mA
2.3 V ≤ VCCr ≤ 2.7 V,
IDR1
VIN ≤ 0.2 V or VIN ≥ VCCr – 0.2 V,
CE1r = CE2r ≥ VCCr – 0.2 V,
IOUT = 0 mA
tDRS
2.7 V ≤ VCCr ≤ 3.1 V
at data retention entry
Value
Min Max
2.3
3.1
—
1.5
—
150
0
—
Data Retention Recovery Time
tDRR
2.7 V ≤ VCCr ≤ 3.1 V
after data retention
200
—
Unit
V
mA
µA
ns
ns
VCCr Voltage Transition Time
∆V/∆t
—
0.2
— V/µs
* : 2.0 V ≤ VIH ≤ VCCr+0.3 V
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