MB84VD23581FJ-70 Datasheet, PDF (53/56 Pages) SPANSION – 64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM

MB84VD23581FJ-70
• Data Retention Timing
3.1 V
2.7 V
VCCr
tDRS
∆V/∆t
tDRR
∆V/∆t
CE2r
2.3 V
CE1r
CE1r = CE2r >VCCr-0.2 V
or VIH* Min
0.4 V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
* : 2.0 V ≤ VIH ≤ Vccr + 0.3 V
s PIN CAPACITANCE
Parameter
Symbol
Input Capacitance
CIN
Output Capacitance
COUT
Control Pin Capacitance
CIN2
WP/ACC Pin Capacitance
CIN3
Note : Test conditions TA = +25 °C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
VIN = 0
Typ
Max
Unit
11
14
pF
12
16
pF
14
16
pF
21.5
26
pF
s HANDLING OF PACKAGE
Please handle this package carefully since the sides of package create acute angles.
s CAUTION
• The high voltage (VID) cannot apply to address pins and control pins except RESET. Exception is when
autoselect and sector group protect function are used, then the high voltage (VID) can be applied to RESET.
• Without the high voltage (VID) , sector group protection can be achieved by using “Extended Sector Group
Protection” command.
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