MB84VD23180FM Datasheet, PDF (9/49 Pages) SPANSION – 64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

MB84VD23180FM-70
Operation *^1, *³
Full Standby
User Bus Operations (Flash=Byte mode; CIOf=Vss)
CEf CE1s CE2s DQ15/A–1 OE WE
LB
(6)
UB
(6)
DQ0 to
DQ7
HX
H
XL
X
X X X X High-Z
Output Disable
HL H
HX
L
XL
X
H H X X High-Z
X
X X H H High-Z
A–1 H H X X High-Z
HX
Read from Flash*² L
XL
A–1
LH X X
DOUT
Write to Flash
HX
L
A–1
HL X X
DIN
XL
Read from SRAM H L H
Write to SRAM
HL H
Temporary
Sector Group Un- X X X
protection*⁴
X
LH X X
DOUT
X
XL X X
DIN
X
XX X X
X
Flash Hardware
Reset
H
X
X
X
L
X
X X X X High-Z
Boot Block Sector
Write Protection
X
X
X
X
XX X X
X
Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
*1 : Other operations except for indicated this column are inhibited.
*2 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*3 : Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time.
*4 : It is also used for the extended sector group protections.
*5 : Protect of 2 of 8 Kbytes on both ends of each boot sector.
DQ8 to
DQ14
High-Z
High-Z
High-Z
High-Z
X
X
High-Z
High-Z
X
High-Z
X
RESET
WP/
ACC*⁵
H
X
H
X
H
X
H
X
H
X
H
X
VID
X
L
X
X
L
8