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MB84VD23180FM Datasheet, PDF (44/49 Pages) SPANSION – 64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM
MB84VD23180FM-70
• Write Cycle *1 (LB, UB Control) (SRAM)
Address
WE
CE1s
CE2s
LB, UB
DOUT
DIN
tWC
tWP
tWR
tCW
tCW
tAW
tAS
tBW
tBE
tCOE
tODW
tDS
tDH
*2
Valid Data In
*2
*1 : If OE is HIGH during the write cycle, the outputs will remain at high impedance.
*2 : Because I/O signals may be in the output state at this Time, input signals of reverse polarity
must not be applied.
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