MB84VD23180FM Datasheet, PDF (11/49 Pages) SPANSION – 64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

MB84VD23180FM-70
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Conditions
Input Leakage Current
Output Leakage Current
RESET Inputs Leakage
Current
ACC Input Leakage Current
Flash VCC Active Current
(Read) *¹
Flash VCC Active Current
(Program/Erase) *²
Flash VCC Active Current
(Read-While-Program) *⁵
Flash VCC Active Current
(Read-While-Erase) *⁵
Flash VCC Active Current
(Erase-Suspend-Program)
SRAM VCC Active Current
SRAM VCC Active Current
Flash VCC Standby Current
Flash VCC Standby Current
(RESET)
Flash VCC Current
(Automatic Sleep Mode) *³
SRAM VCC Standby
Current
SRAM VCC Standby
Current
ILI
ILO
ILIT
ILIA
ICC1f
VIN = VSS to VCCf, VCCs
VOUT = VSS to VCCf, VCCs
VCCf = VCCf Max, VCCs = VCCs Max,
RESET = 12.5 V
VCCf = VCCf Max, VCCs = VCCs Max,
WP/ACC = VACC Max
tCYCLE = 5 MHz Word
CEf = VIL,
OE = VIH
tCYCLE = 1 MHz Word
tCYCLE = 5 MHz Byte
tCYCLE = 1 MHz Byte
ICC2f CEf = VIL, OE = VIH
ICC3f CEf = VIL, OE = VIH
ICC4f CEf = VIL, OE = VIH
Word
Byte
Word
Byte
ICC5f CEf = VIL, OE = VIH
ICC1s
ICC2s
ISB1f
ISB2f
ISB3f
ISB1s
ISB2s
VCCs = VCCs Max,
CE1s = VIL,
tCYCLE =10 MHz
CE2s = VIH
CE1s = 0.2 V,
CE2s =
VCCs – 0.2 V
tCYCLE = 10 MHz
tCYCLE = 1 MHz
VCCf = VCCf Max, CEf = VCCf ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf± 0.3 V
VCCf = VCCf Max, RESET = VSS ± 0.3 V,
WP/ACC = VCCf± 0.3 V
VCCf = VCCf Max, CEf = VSS ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf± 0.3 V,
VIN = VCCf± 0.3 V or VSS ± 0.3 V
CE1s > VCCs – 0.2 V, CE2s > VCCs – 0.2 V
LB = UB > VCCs–0.2 V or < 0.2V
CE1s > VCCs – 0.2 V or < 0.2V,
CE2s < 0.2 V
LB = UB > VCCs–0.2 V or < 0.2V
Min
–1.0
–1.0
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Value
Typ
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1
1
1
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Unit
Max
+1.0 µA
+1.0 µA
35 µA
20 mA
18
mA
4
16 mA
4 mA
30 mA
48 mA
46 mA
48 mA
46 mA
30 mA
40 mA
40 mA
8 mA
5 µA
5 µA
5 µA
10 µA
10 µA
(Continued)
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