MB84VD23180FM Datasheet, PDF (8/49 Pages) SPANSION – 64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

MB84VD23180FM-70
s DEVICE BUS OPERATIONS
Operation *^1, *³
User Bus Operations (Flash=Word mode; CIOf=Vccf)
CEf CE1s CE2s OE WE
LB
UB
DQ7 to DQ0
DQ15 to DQ8
RESET
WP/
ACC*⁵
Full Standby
H
H
X
X
XXX X
L
High-Z
High-Z
H
X
Output Disable
HL
H
L
X
HHX X
H
XXHH
X
HHX X
L
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
H
X
H
X
Read from Flash *² L
LHX X
X
L
DOUT
DOUT
H
X
Write to Flash
H
X
L
HLXX
DIN
X
L
DIN
H
X
LL
DOUT
DOUT
Read from SRAM H L
H LHH L
High-Z
DOUT
H
X
LH
DOUT
High-Z
LL
DIN
DIN
Write to SRAM
HL
H XLHL
High-Z
DIN
H
X
LH
DIN
High-Z
Temporary
Sector Group
XX
X XXXX
X
Unprotection *⁴
X
VID
X
Flash Hardware
Reset
H
X
X
X
XXX X
L
High-Z
High-Z
L
X
Boot Block Sector
Write Protection
X
X
X XXXX
X
X
Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
X
L
*1 : Other operations except for indicated this column are inhibited.
*2 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*3 : Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time.
*4 : It is also used for the extended sector group protections.
*5 : Protect of 2 of 8 Kbytes on both ends of each boot sector.
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