MB84VD23180FM Datasheet, PDF (3/49 Pages) SPANSION – 64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

MB84VD23180FM-70
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 FLASH MEMORY
• Simultaneous Read/Write operations (Dual Bank)
• FlexBank^TM*¹
Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15)
Bank B : 24 Mbit (64 KB × 48)
Bank C : 24 Mbit (64 KB × 48)
Bank D : 8 Mbit (8 KB × 8 and 64 KB × 15)
Two virtual Banks are chosen from the combination of four physical banks (Refer to “Example of Virtual Banks
Combination table” and “Simultaneous Operation table”) .
Host system can program or erase in one bank, and then read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
• Single 3.0 V read, program, and erase
Minimized system level power requirements
• Minimum 100,000 program/erase cycles
• Sector erase architecture
Sixteen 4 Kword and one hundred twenty-six 32 Kword sectors in word.
Any combination of sectors can be concurrently erased. It also supports full chip erase.
• HiddenROM region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of “outermost” 2 × 8 Kbytes on both ends of boot sectors, regardless of sector protection/
unprotection status
At VIH, allows removal of boot sector protection
At VACC, increases program performance
• Embedded Erase^TM*² Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded Program^TM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, the device automatically switches itself to low power mode.
• Low VCCf write inhibit ≤ 2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another byte
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Please refer to “MBM29DL64DF” data sheet in detailed function
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