MB84VD23180FM Datasheet, PDF (2/49 Pages) SPANSION – 64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50309-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
64M (×16) FLASH MEMORY &
4M (×16) STATIC RAM
MB84VD23180FM-70
s FEATURES
• Power supply voltage of 2.7 V to 3.1 V
• High performance
70 ns maximum access time (Flash)
70 ns maximum access time (SRAM)
• Operating Temperature
–30 °C to +85 °C
• Package 73-ball FBGA
s PRODUCT LINEUP
Flash Memory
(Continued)
SRAM
Supply Voltage (V)
Max Address Access Time (ns)
VCCr*
=
3.0
V
+0.1V
–0.3 V
70
VCCs*
=
3.0
V
+0.1V
–0.3 V
70
Max CE Access Time (ns)
70
70
Max OE Access Time (ns)
30
35
*: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.
s PACKAGE
73-ball plastic FBGA
BGA-73P-M03