MB84VP23481FK-70 Datasheet, PDF (7/67 Pages) SPANSION – 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

MB84VP23481FK-70
s DEVICE BUS OPERATIONS
Operation*^1, *²
Full Standby
CEf CE1r CE2r OE WE LB
UB
A21 to
A0
DQ7 to
DQ0
DQ15 to
DQ8
RESET WP/ACC*⁹
H H H X X X X X High-Z High-Z H
X
Output Disable*³
HL
H H H X X X*⁸ High-Z High-Z H
X
LH
Read from Flash*⁴
L
H
H L H X X Valid DOUT
DOUT
H
X
Write to Flash
L
H
H H L X X Valid
DIN
DIN
H
X
LL
DIN
DIN
Read from FCRAM
H
L
H L H H L Valid High-Z DIN
H
X
LH
DIN High-Z
FCRAM No Read
H L H L H H H Valid High-Z High-Z H
X
LL
DIN
DIN
Write to FCRAM
H
L
H H*⁷ L H L Valid High-Z DIN
H
X
LH
DIN High-Z
FCRAM No Write
H
L
H H*⁷ L H H Valid High-Z High-Z
H
X
Flash Temporary Sector
Group Unprotection*⁵
X X X XX X X X
X
X
VID
X
Flash Hardware Reset
X H H X X X X X High-Z High-Z L
X
Flash Boot Block Sector Write
Protection
X
X
X XX X X
X
X
X
X
L
FCRAM Power Down*⁶
XX
L XX X X
X
X
X
X
X
Legend: L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance.
See sDC CHARACTERISTICS for voltage levels.
*1 : Other operations except for indicated this column are inhibited.
*2 : Do not apply for two or more states of the following conditions at the same time;
• CEf = VIL
• CE1r = VIL and CE2r = VIH
*3 : Should not be kept FCRAM Output Disable condition longer than 1µs.
*4 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*5 : It is also used for the extended sector group protections.
*6 : FCRAM Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
Data retention depends on the selection of Power Down Program. Please refer to “Power Down Program”
in FCRAM Characteristics part.
*7 : OE can be VIL during Write operation if the following conditions are satisfied;
1) Write pulse is initiated by CE1r (refer to CE1r Controlled Write timing), or cycle time of the previous
operation cycle is satisfied.
2) OE stays VIL during Write cycle.
*8 : Can be either VIL or VIH but must be valid before Read or Write.
*9 : Protect “outer most” 2x8K bytes (4 words) on both ends of the boot block sectors.
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