MB84VP23481FK-70 Datasheet, PDF (25/67 Pages) SPANSION – 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

MB84VP23481FK-70
• Write (Erase/Program) Operations
Parameter
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low During
Toggle Bit Polling
Address Hold Time
Address Hold Time from CEf or OE High
During Toggle Bit Polling
Data Setup Time
Data Hold Time
Output Enable ^Read
Hold Time
Toggle and Data Polling
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write
Read Recover Time Before Write
CE Setup Time
WE Setup Time
CE Hold Time
WE Hold Time
Write Pulse Width
CE Pulse Width
Write Pulse Width High
CE Pulse Width High
Word Programming Operation
Sector Erase Operation*¹
VCC Setup Time
Rise Time to VACC*²
Symbol
JEDEC Standard
tAVAV
tWC
tAVWL
tAS
—
tASO
tWLAX
tAH
—
tAHT
tDVWH
tDS
tWHDX
tDH
—
tOEH
—
—
tGHWL
tGHEL
tELWL
tWLEL
tWHEH
tEHWH
tWLWH
tELEH
tWHWL
tEHEL
tWHWH1
tWHWH2
—
—
tCEPH
tOEPH
tGHWL
tGHEL
tCS
tWS
tCH
tWH
tWP
tCP
tWPH
tCPH
tWHWH1
tWHWH2
tVCS
tVACCR
Value
Unit
Min Typ Max
65
—
—
ns
0
—
—
ns
12
—
—
ns
45
—
—
ns
0
—
—
ns
35
—
0
—
0
—
10
—
20
—
20
—
0
—
0
—
0
—
0
—
0
—
0
—
35
—
35
—
30
—
30
—
—
6
—
0.5
50
—
500
—
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
µs
—
s
—
µs
—
ns
(Continued)
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