MB84VP23481FK-70 Datasheet, PDF (1/67 Pages) SPANSION – 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50224-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64M (×16) Page FLASH MEMORY &
32M (×16) Mobile FCRAM^TM
MB84VP23481FK-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V
• High Performance
25 ns maximum page read access time, 65 ns maximum random access time (Flash)
20 ns maximum page read access time, 70 ns maximum random access time (FCRAM)
• Operating Temperature
–30 °C to +85 °C
• Package 65-ball FBGA
s PRODUCT LINEUP
(Continued)
Flash
Supply Voltage (V)
Max Random Address Access Time (ns)
VCCf*
=
3.0
V
+0.1V
–0.3 V
65
Max Page Address Access Time (ns)
25
Max CE Access Time (ns)
65
Max OE Access Time (ns)
25
*: Both VCCf and VCCr must be the same level when either part is being accessed.
FCRAM
VCCr*
=
3.0
V
+0.1V
–0.3 V
70
20
70
40
s PACKAGE
65-ball plastic FBGA
(BGA-65P-M01)