MB84VP23481FK-70 Datasheet, PDF (10/67 Pages) SPANSION – 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

MB84VP23481FK-70
(Continued)
Parameter
Sym-
bol
Conditions
Value
Unit
Min Typ Max
Input Low Level
VIL
—
–0.3
—
VCC × 0.2
*⁶
V
Input High Level
VIH
—
VCC × 0.8
*⁶
—
VCC + 0.2
*⁶
V
Voltage for Sector Protection, and
Temporary Sector Unprotection VID
—
(RESET) *⁴
11.5 12 12.5 V
Voltage for WP/ACC
Sector Protection/Unprotection VACC
—
and Program Acceleration *⁴
8.5 9.0 9.5 V
Output Low Voltage Level
VOLf VCCf = VCCf Min, IOL=4.0 mA Flash
—
— 0.4
V
VOLr VCCr = VCCr Min, IOL =1.0mA FCRAM —
— 0.4
V
Output High Voltage Level
VOHf VCCf = VCCf Min, IOH=–2.0 mA Flash
2.4
—
—
V
VOHr VCCr = VCCr Min, IOH=–0.5 mA FCRAM 2.4
—
—
V
Flash Low VCCf Lock-Out Voltage VLKO
—
2.3 2.4 2.5 V
*1: The ICC current listed includes both the DC operating current and the frequency dependent component.
*2: ICC active while Embedded Algorithm (program or erase) is in progress.
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: Applicable for only VCCf applying.
*5: Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*6: VCC indicates lower of VCCf or VCCr.
*7: FCRAM Characteristics are measured after following POWER-UP timing.
*8: IOUT depends on the output load conditions.
*9: Address except A2, A1 and A0 are fixed.
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