MB84VP23481FK-70 Datasheet, PDF (41/67 Pages) SPANSION – 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

MB84VP23481FK-70
3. Erase and Programming Performance
Parameter
Limits
Unit
Min
Typ
Max
Comments
Sector Erase Time
—
0.5
2.0
s
Excludes programming time
prior to erasure
Word Programming Time
—
6
100
µs
Excludes system-level
overhead
Chip Programming Time
—
25.2
95
s
Excludes system-level
overhead
Erase/Program Cycle
100,000
—
—
cycle
—
Note Typical Erase conditions TA = + 25°C, VCCf = 2.9 V
Typical Program conditions TA = + 25°C, VCCf = 2.9 V, Data = Checker
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