S6E2H1 Datasheet, PDF (148/159 Pages) SPANSION – processor version

S6E2H1 Series
12.8 MainFlash Memory Write/Erase Characteristics
Parameter
Value
Min Typ Max
Sector erase
time
Large Sector
Small Sector
-
0.7 3.7
0.3 1.1
Half word
(16-bit)
write time
Write cycles
< 100 times
Write cycles >
-
100 times
100
12
200
Chip erase time
-
13.6 68
Unit
Remarks
s
Includes write time prior to internal
erase
μs
Not including system-level overhead
time
s
Includes write time prior to internal
erase
(VCC = 2.7V to 5.5V)
Write cycles and data hold time
Erase/Write cycles (cycle)
Data hold time (year)
1,000
20 *
10,000
10 *
100,000
5*
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test result
into average temperature value at + 85°C) .
12.9 WorkFlash Memory Write/Erase Characteristics
Parameter
Sector erase time
Half word (16-bit)
write time
Value
Min Typ Max
Unit
-
0.3 1.5
s
-
20 200 μs
(VCC = 2.7V to 5.5V)
Remarks
Includes write time prior to internal erase
Not including system-level overhead time
Chip erase time
-
1.2
6
s Includes write time prior to internal erase
Write cycles and data hold time
Erase/Write cycles (cycle)
Data hold time (year)
1,000
20 *
10,000
10 *
100,000
5*
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test result
into average temperature value at + 85°C) .
Document Number: 001-98940 Rev.*A
Page 148 of 159