SI8233 Datasheet, PDF (8/57 Pages) Silicon Laboratories – 0.5 AND 4.0 AMP ISODRIVERS

Si823x
Table 1. Electrical Characteristics¹ (Continued)
2.7 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Condition
Min
Typ Max Unit
AC Specifications
Minimum Pulse Width
—
10
—
ns
Propagation Delay
Pulse Width Distortion
|t_PLH - t_PHL|
Minimum Overlap Time²
Programmed Dead Time³
Output Rise and Fall Time
Shutdown Time from
Disable True
Restart Time from
Disable False
Device Start-up Time
t_PHL, t_PLH
CL = 200 pF
—
PWD
—
TDD
DT
t_R,t_F
t_SD
DT = VDDI, No-Connect
—
Figure 42, RDT = 100 k
—
Figure 42, RDT = 6 k
—
C_L = 200 pF (Si8230/1/2/7)
—
C_L = 200 pF (Si8233/4/5/6/8)
—
—
t_RESTART
—
t_START
Time from VDD_ = VDD_UV+
to VOA, VOB = VIA, VIB
—
30
60
ns
— 5.60 ns
0.4
—
ns
900 —
ns
70
—
ns
—
20
ns
—
12
ns
—
60
ns
—
60
ns
—
40
µs
Common Mode
Transient Immunity
CMTI
VIA, VIB, PWM = VDDI or 0 V
V_CM = 1500 V (see Figure 6)
20
45
— kV/µs
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k..
8
Rev. 1.7