SI8233 Datasheet, PDF (7/57 Pages) Silicon Laboratories – 0.5 AND 4.0 AMP ISODRIVERS

Si823x
Table 1. Electrical Characteristics¹ (Continued)
2.7 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Condition
Min
Typ Max Unit
Output Source Resistance
R_ON(SOURCE)
Si8230/1/2/7
Si8233/4/5/6/8
—
15
—

—
2.7 —

VDDI Undervoltage Threshold ^VDDI_UV+
VDDI rising
(Si8230/1/2/3/4/5/6)
3.60
4.0 4.45 V
VDDI Undervoltage Threshold ^VDDI_UV–
VDDI falling
(Si8230/1/2/3/4/5/6)
3.30 3.70 4.15 V
VDDI Lockout Hysteresis
VDDI Undervoltage Threshold
VDDI Undervoltage Threshold
VDDI_HYS
VDDI_UV+
VDDI_UV–
(Si8230/1/2/3/4/5/6)
VDDI rising (Si8237/8)
VDDI falling (Si8237/8)
—
250 — mV
2.15
2.3 2.5
V
2.10 2.22 2.40 V
VDDI Lockout Hysteresis
VDDA, VDDB Undervoltage
Threshold
5 V Threshold
VDDI_HYS
VDDA_UV+,
VDDB_UV+
(Si8237/8)
VDDA, VDDB rising
See Figure 37 on page 27.
—
75
— mV
5.20 5.80 6.30 V
8 V Threshold
See Figure 38 on page 27.
7.50 8.60 9.40 V
10 V Threshold
See Figure 39 on page 27.
9.60 11.1 12.2 V
12.5 V Threshold
See Figure 40 on page 27.
12.4 13.8 14.8 V
VDDA, VDDB Undervoltage
Threshold
VDDA_UV–,
VDDB_UV–
VDDA, VDDB falling
5 V Threshold
See Figure 37 on page 27.
4.90 5.52 6.0
V
8 V Threshold
See Figure 38 on page 27.
7.20 8.10 8.70 V
10 V Threshold
See Figure 39 on page 27.
9.40 10.1 10.9 V
12.5 V Threshold
See Figure 40 on page 27.
11.6 12.8 13.8 V
VDDA, VDDB
Lockout Hysteresis
VDDA_HYS,
VDDB_HYS
UVLO voltage = 5 V
—
280 — mV
VDDA, VDDB
Lockout Hysteresis
VDDA_HYS,
VDDB_HYS
UVLO voltage = 8 V
—
600 — mV
VDDA, VDDB
Lockout Hysteresis
VDDA_HYS,
VDDB_HYS
UVLO voltage = 10 V or 12.5 V
—
1000 — mV
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k..
Rev. 1.7
7