SI8233 Datasheet, PDF (6/57 Pages) Silicon Laboratories – 0.5 AND 4.0 AMP ISODRIVERS

Si823x
2. Electrical Specifications
Table 1. Electrical Characteristics¹
2.7 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Condition
Min
Typ Max Unit
DC Specifications
Input-side Power Supply
Voltage
Driver Supply Voltage
VDDI
Si8230/1/2/3/4/5/6
4.5
Si8237/8
2.7
Voltage between VDDA and
VDDA, VDDB GNDA, and VDDB and GNDB 6.5
(See “6. Ordering Guide” )
— 5.5
— 5.5
V
—
24
V
Input Supply Quiescent
Current
IDDI(Q)
Si8230/2/3/5/6/7/8
Si8231/4
—
2
3
mA
—
3.5
5
mA
Output Supply Quiescent
Current
IDDA(Q),
IDDB(Q)
Current per channel
—
Input Supply Active Current
IDDI
Input freq = 500 kHz, no load
—
Output Supply Active Current
IDDA
IDDB
Current per channel with
Input freq = 500 kHz, no load
—
— 3.0 mA
3.5 — mA
6
— mA
Input Pin Leakage Current
IVIA, IVIB,
IPWM
–10
— +10 µA dc
Input Pin Leakage Current
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Logic High Output Voltage
IDISABLE
VIH
VIL
VI_HYST
VOAH,
VOBH
Si8230/1/2/3/4/5/6/7/8
IOA, IOB = –1 mA
–10
—
2.0
—
—
—
400
450
(VDDA
/VDDB) —
— 0.04
+10 µA dc
—
V
0.8
V
— mV
—
V
Logic Low Output Voltage
Output Short-Circuit Pulsed
Sink Current
VOAL, VOBL
IOA(SCL),
IOB(SCL)
IOA, IOB = 1 mA
Si8230/1/2/7, Figure 4
Si8233/4/5/6/8, Figure 4
—
— 0.04 V
—
0.5 —
A
—
4.0 —
A
Output Short-Circuit Pulsed
Source Current
IOA(SCH),
IOB(SCH)
Si8230/1/2/7, Figure 5
Si8233/4/5/6/8, Figure 5
—
0.25 —
A
—
2.0 —
A
Output Sink Resistance
R_ON(SINK)
Si8230/1/2/7
Si8233/4/5/6/8
—
5.0 —

—
1.0 —

Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k..
6
Rev. 1.7