SI8233 Datasheet, PDF (14/57 Pages) Silicon Laboratories – 0.5 AND 4.0 AMP ISODRIVERS

Si823x
Table 7. Thermal Characteristics
Parameter
IC Junction-to-Air
Thermal Resistance
Symbol
WB
SOIC-16
NB
SOIC-16
_JA
100
105
14 LD
LGA
105
14 LD
LGA with
Pad
50
Unit
°C/W
Table 8. Absolute Maximum Ratings¹
Parameter
Storage Temperature²
Ambient Temperature under Bias
Junction Temperature
Input-side Supply Voltage
Symbol
T_STG
T_A
T_J
VDDI
Min
Max
–65
+150
–40
+125
—
+150
–0.6
6.0
Unit
°C
°C
°C
V
Driver-side Supply Voltage
VDDA, VDDB –0.6
30
V
Voltage on any Pin with respect to Ground
Peak Output Current (t_PW = 10 µs, duty cycle = 0.2%)
(0.5 Amp versions)
V_IO
I_OPK
–0.5 VDD + 0.5
V
—
0.5
A
Peak Output Current (t_PW = 10 µs, duty cycle = 0.2%)
(4.0 Amp versions)
I_OPK
—
4.0
A
Lead Solder Temperature (10 sec.)
—
260
°C
Maximum Isolation (Input to Output) (1 sec)
WB SOIC-16
—
6500
V_RMS
Maximum Isolation (Output to Output) (1 sec)
WB SOIC-16
—
2500
V_RMS
Maximum Isolation (Input to Output) (1 sec)
NB SOIC-16
—
4500
V_RMS
Maximum Isolation (Output to Output) (1 sec)
NB SOIC-16
—
2500
V_RMS
Maximum Isolation (Input to Output) (1 sec)
14 LD LGA without Thermal Pad
—
3850
V_RMS
Maximum Isolation (Output to Output) (1 sec)
14 LD LGA without Thermal Pad
—
650
V_RMS
Maximum Isolation (Input to Output) (1 sec)
14 LD LGA with Thermal Pad
—
1850
V_RMS
Maximum Isolation (Output to Output) (1 sec)
14 LD LGA with Thermal Pad
—
—
0
V_RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. VDE certifies storage temperature from –40 to 150 °C.
14
Rev. 1.7