SI8233 Datasheet, PDF (13/57 Pages) Silicon Laboratories – 0.5 AND 4.0 AMP ISODRIVERS

Si823x
Table 5. IEC 60747-5-5 Insulation Characteristics*
Parameter
Symbol Test Condition
Characteristic
WB NB SOIC-16 14 LD LGA ^Unit
SOIC-16 14 LD LGA with Pad
Maximum Working Insulation
Voltage
Input to Output Test Voltage
V_IORM
Method b1
(V_IORM x 1.875 = V_PR,
100%
V_PR
Production Test,
t_m = 1 sec,
Partial Discharge < 5
pC)
891
1671
560
1050
373 V peak
700 V peak
Transient Overvoltage
V_IOTM
t = 60 sec
6000
4000
2650 V peak
Pollution Degree (DIN VDE
0110, Table 1)
2
2
2
Insulation Resistance at T_S,
V_IO = 500 V
R_S
>10⁹
>10⁹
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si823x provides a climate classification of
40/125/21.
Table 6. IEC Safety Limiting Values¹
Parameter Symbol
Test Condition
WB
NB
SOIC-16 SOIC-16
14 LD
LGA
14 LD
LGA with
Pad
Unit
Case
Temperature
T_S
150
150
150
150
°C
Safety Input
Current
_JA = 100 °C/W (WB SOIC-16),
105 °C/W (NB SOIC-16, 14 LD LGA),
I_S
50 °C/W (14 LD LGA with Pad)
V_DDI = 5.5 V,
50
V_DDA = V_DDB = 24 V,
T_J = 150 °C, T_A = 25 °C
50
50
100
mA
Device Power
Dissipation²
P_D
1.2
1.2
1.2
1.2
W
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 7 and 8.
2. The Si82xx is tested with V_DDI = 5.5 V, V_DDA = V_DDB = 24 V, T_J = 150 ºC, C_L = 100 pF, input 2 MHz 50% duty cycle
square wave.
Rev. 1.7
13