SI4430-B1 Datasheet, PDF (7/74 Pages) Silicon Laboratories – Si4430/31/32 ISM TRANSCEIVER

Si4430/31/32-B1
1. Electrical Specifications
Table 1. DC Characteristics¹
Parameter
Symbol
Conditions
Min Typ Max Units
Supply Voltage Range
Power Saving Modes
V_DD
I_Shutdown
RC Oscillator, Main Digital Regulator,
and Low Power Digital Regulator OFF²
1.8 3.0 3.6
V
— 15 50 nA
I_Standby Low Power Digital Regulator ON (Register values retained) — 450 800 nA
and Main Digital Regulator, and RC Oscillator OFF
I_Sleep
RC Oscillator and Low Power Digital Regulator ON
—1
(Register values retained) and Main Digital Regulator OFF
— µA
I_Sensor-LBD
Main Digital Regulator and Low Battery Detector ON,
Crystal Oscillator and all other blocks OFF²
—1
— µA
I_Sensor-TS
Main Digital Regulator and Temperature Sensor ON,
Crystal Oscillator and all other blocks OFF²
—1
— µA
I_Ready
Crystal Oscillator and Main Digital Regulator ON,
all other blocks OFF. Crystal Oscillator buffer disabled
— 800 — µA
TUNE Mode Current
RX Mode Current
TX Mode Current
—Si4432
I_Tune
I_RX
I_{TX_+20}
Synthesizer and regulators enabled
txpow[2:0] = 111 (+20 dBm)
Using Silicon Labs’ Reference Design. TX current
consumption is dependent on match and board layout.
— 8.5 — mA
— 18.5 — mA
— 85 — mA
TX Mode Current
—Si4430/31
I_{TX_+13}
txpow[2:0] = 110 (+13 dBm)
Using Silicon Labs’ Reference Design. TX current
consumption is dependent on match and board layout.
— 30 — mA
I_{TX_+1}
txpow[2:0] = 010 (+1 dBm)
Using Silicon Labs’ Reference Design. TX current
consumption is dependent on match and board layout.
— 17
— mA
Notes:
1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in the "Production Test Conditions" section on page 14.
2. Guaranteed by qualification. Qualification test conditions are listed in the "Production Test Conditions" section on
page 14.
Rev 1.1
7