SI823X Datasheet, PDF (6/52 Pages) Silicon Laboratories – 0.5 AND 4.0 AMP ISODRIVERS (2.5 AND 5 KVRMS)

Si823x
2. Electrical Specifications
Table 1. Electrical Characteristics¹
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Conditions
Min
Typ Max Units
DC Specifications
Input-side Power Supply
Voltage
Driver Supply Voltage
VDDI
4.5
Voltage between VDDA and
VDDA, VDDB GNDA, and VDDB and GNDB 6.5
(See “9. Ordering Guide” )
— 5.5
V
—
24
V
Input Supply Quiescent
Current
IDDI(Q)
Si8230/32/33/35/36
Si8231/34
—
2
3
mA
—
2
3
mA
Output Supply Quiescent
Current
Input Supply Active Current
Output Supply Active Current
Input Pin Leakage Current
IDDA(Q),
IDDB(Q)
IDDI
IDDO
IVIA, IVIB,
IPWM
Current per channel
PWM freq = 500 kHz
PWM freq = 500 kHz
—
— 3.0 mA
—
2.5 — mA
—
3.6 — mA
–10
— +10 µA dc
Input Pin Leakage Current
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Logic High Output Voltage
IDISABLE
VIH
VIL
VI_HYST
VOAH,
VOBH
IOA, IOB = –1 mA
–10
—
2.0
—
—
—
400
450
(VDDA
/VDDB) —
— 0.04
+10 µA dc
—
V
0.8
V
— mV
—
V
Logic Low Output Voltage
Output Short-circuit Pulsed
Sink Current
Output Short-circuit Pulsed
Source Current
VOAL, VOBL
IOA(SCL),
IOB(SCL)
IOA(SCH),
IOB(SCH)
IOA, IOB = 1 mA
Si8230/1/2, Figure 4
Si8233/4/5/6, Figure 4
Si8230/1/2, Figure 5
Si8233/4/5/6, Figure 5
—
— 0.04 V
—
0.5 —
—
4.0 —
A
—
0.25 —
—
2.0 —
Output Sink Resistance
R_ON(SINK)
Output Source Resistance
R_ON(SOURCE)
Si8230/1/2
Si8233/4/5/6
Si8230/1/2
Si8233/4/5/6
—
5.0 —
—
1.0 —

—
15
—
—
2.7 —
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
6
Rev. 0.3