SI8431BB-C-IS Datasheet, PDF (16/38 Pages) Silicon Laboratories – LOW-POWER TRIPLE-CHANNEL DIGITAL ISOLATOR

Si8430/31/35
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
I
I-IV
I-III
I-II
I-II
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Parameter
Symbol
Test Condition
Characteristic Unit
Maximum Working Insulation Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
560
1050
V peak
V peak
Transient Overvoltage
V_IOTM
t = 60 sec
4000
V peak
Pollution Degree (DIN VDE 0110, Table 1)
2
Insulation Resistance at T_S, V_IO = 500 V
R_S
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
Max
Min Typ _WB
NB ^Unit
SOIC-16 SOIC-16
Case Temperature
T_S
——
150
150
°C
Safety input, output, or
supply current
_JA = 100 °C/W (WB SOIC-16),
I_S
105 °C/W (NB SOIC-16),
——
220
V_I = 5.5 V, T_J = 150 °C, T_A = 25 °C
210 mA
Device Power
Dissipation²
P_D
——
275
275 mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si843x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
16
Rev. 1.5