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SI8431BB-C-IS Datasheet, PDF (11/38 Pages) Silicon Laboratories – LOW-POWER TRIPLE-CHANNEL DIGITAL ISOLATOR
Si8430/31/35
Table 4. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter
Symbol Test Condition
Min
Typ
Max Unit
Si843xBx
Maximum Data Rate
0
Minimum Pulse Width
—
Propagation Delay
tPHL, tPLH See Figure 2
3.0
Pulse Width Distortion
|tPLH - tPHL|
Propagation Delay Skew2
PWD
See Figure 2
—
tPSK(P-P)
—
Channel-Channel Skew
tPSK
—
All Models
—
150 Mbps
—
6.0
ns
6.0
9.5
ns
1.5
2.5
ns
2.0
3.0
ns
0.5
1.8
ns
Output Rise Time
tr
CL = 15 pF
See Figure 2
—
4.3
6.1
ns
Output Fall Time
tf
CL = 15 pF
See Figure 2
—
3.0
4.3
ns
Common Mode Transient
Immunity
CMTI VI = VDD or 0 V
—
25
— kV/µs
Enable to Data Valid3
ten1
See Figure 1
—
5.0
8.0
ns
Enable to Data Tri-State3
ten2
See Figure 1
—
7.0
9.2
ns
Start-up Time3,4
tSU
—
15
40
µs
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 25 for more details.
4. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.5
11