EZR32WG330 Datasheet, PDF (13/87 Pages) Silicon Laboratories – Building and home automation

4.3 Thermal Characteristics
EZR32WG330 Data Sheet
Electrical Specifications
Table 4.2. Thermal Conditions
Parameter
Symbol
Test Condi-
Min
Typ
Max
Unit
tion
Ambient temperature range
T_AMB
-40
─
85
°C
Junction temperature value
T_J
─
─
105¹
°C
+13/+16 dBm
─
on 2-layer
Thermal impedance junction to
ambient
TI_JA
board
+20 dBm on 4-
─
layer board
─
61.8
°C/W
─
20.7²
°C/W
Storage temperature range
T_STG
-55
─
150
°C
Note:
1. Values are based on simulations run on 2 layer and 4 layer PCBs at 0m/s airflow.
2. Based on programmed devices tested for 10000 hours at 150 ºC. Storage temperature affects retention of preprogrammed cali-
bration values stored in flash. Please refer to the Flash section in the Electrical Characteristics for information on flash data reten-
tion for different temperatures.
4.4 General Operating Conditions
Table 4.3. General Operating Conditions
Parameter
Symbol
Min
Typ
Max
Ambient temperature range
T_AMB
-40
─
85
Operating supply voltage
V_DDOP
1.98
─
3.8
Internal APB clock frequency
f_APB
─
─
48
Internal AHB clock frequency
f_AHB
─
─
48
Table 4.4. Environmental
Parameter
Symbol
Test Condi-
Min
tion
ESD (Human Body Model HBM) V_ESDHBM
T_AMB=25 °C
─
ESD (Charged Device Model,
V_ESDCDM
T_AMB=25 °C
─
CDM)
Typ
Max
─
2000
─
500
Latch-up sensitivity passed: ±100 mA/1.5 × V_SUPPLY(max) according to JEDEC JESD 78 method Class II, 85 °C.
Unit
°C
V
MHz
MHz
Unit
V
V
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