SI8605 Datasheet, PDF (12/40 Pages) Silicon Laboratories – BIDIRECTIONAL IC ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS

Si860x
Table 9. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Characteristic
Parameter
Symbol
Test Condition
WB
NB SOIC-8 ^Unit
SOIC-16 SOIC-16
Maximum Working Insulation
Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
1200
2250
630
Vpeak
1182
Vpeak
Transient Overvoltage
V_IOTM
t = 60 sec
6000
6000
Vpeak
Pollution Degree
(DIN VDE 0110, Table 1)
2
2
Insulation Resistance at T_S,
V_IO = 500 V
R_S
>10⁹
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
NB
NB
SOIC-8 SOIC-16
WB
SOIC-16
Unit
Case Temperature
T_S
150
150
Safety Input Current
_JA = 100 °C/W (WB SOIC-16),
105 °C/W (NB SOIC-16), 140 °C/W
I_S
(NB SOIC-8)
160
210
AVDD, BVDD = 5.5 V,
T_J = 150 °C, T_A = 25 °C
Device Power Dissipation^{2 P}_D
220
275
150
°C
220
mA
275 mW
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 4, 5, and 6.
2. The Si86xx is tested with AVDD, BVDD = 5.5 V; T_J = 150 ºC; C₁, C₂ = 0.1 µF; C₃ = 15 pF; R1, R2 = 3kinput 1 MHz
50% duty cycle square wave.
12
Rev. 1.4