SI8605 Datasheet, PDF (11/40 Pages) Silicon Laboratories – BIDIRECTIONAL IC ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS

Si860x
Table 7. Insulation and Safety-Related Specifications
Parameter
Symbol Test Condition
Nominal Air Gap (Clearance)¹
Nominal External Tracking
(Creepage)¹
Minimum Internal Gap
(Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
Resistance (Input-Output)²
Capacitance (Input-Output)²
Input Capacitance³
L(1O1)
L(1O2)
PTI
ED
R_IO
C_IO
C_I
IEC60112
f = 1 MHz
Non-I²C Channel
I²C Channel
NB
SOIC-8
4.9
4.01
0.014
600
0.040
10¹²
1.0
4.0
10
Value
NB
SOIC-16
4.9
4.01
0.014
600
0.019
10¹²
2.0
4.0
10
WB
Unit
SOIC-16
8.0
mm
8.0
mm
0.014
mm
600
0.019
10¹²
2.0
4.0
10
V_RMS
mm

pF
pF
pF
Notes:
1. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-8 and SOIC-16 packages and
8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for
component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8
and SOIC-16 packages and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si860x, SO-16, is converted into a 2-terminal device. Pins 1–8 (1–4, SO-
8) are shorted together to form the first terminal and pins 9–16 (5–8, SO-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
NB SOIC-8
SOIC-16
I
I-IV
I-III
WB SOIC-16
I
I-IV
I-IV
I-II
I-III
I-II
I-III
Rev. 1.4
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