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SI516 Datasheet, PDF (10/22 Pages) Silicon Laboratories – DUAL FREQUENCY VOLTAGE-CONTROLLED
Si516
Table 8. Output Clock Jitter and Phase Noise (CMOS, Dual CMOS)
VDD = 1.8 V ±5%, 2.5 or 3.3 V ±10%, TA = –40 to +85 oC; Output Format = CMOS, Dual CMOS
Parameter
Phase Jitter
(RMS)
Symbol
Test Condition
Min
Typ
Max
Unit
φJ
1.875 MHz to 20 MHz integration
—
0.25
0.35
ps
bandwidth2 (brickwall)
Phase Noise,
156.25 MHz
12 kHz to 20 MHz integration band-
—
width2 (brickwall)
φN
100 Hz
—
1 kHz
—
0.8
1.1
ps
–71
—
dBc/Hz
–93
—
dBc/Hz
10 kHz
—
–113
—
dBc/Hz
100 kHz
—
–123
—
dBc/Hz
Spurious
SPR
1 MHz
LVPECL output, 156.25 MHz,
offset > 10 kHz
—
–136
—
dBc/Hz
—
–75
—
dBc
Notes:
1. Applies to output frequencies: 74.17582, 74.25, 75, 77.76, 100, 106.25, 125, 148.35165, 148.5, 150, 155.52, 156.25,
212.5 MHz.
2. Applies to output frequencies: 100, 106.25, 125, 148.35165, 148.5, 150, 155.52, 156.25, 212.5 MHz.
Table 9. Environmental Compliance and Package Information
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross and Fine Leak
Resistance to Solder Heat
Moisture Sensitivity Level
Contact Pads
Conditions/Test Method
MIL-STD-883, Method 2002
MIL-STD-883, Method 2007
MIL-STD-883, Method 2003
MIL-STD-883, Method 1014
MIL-STD-883, Method 2036
MSL 1
Gold over Nickel
10
Rev. 1.0