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S1009 Datasheet, PDF (9/43 Pages) Seiko Instruments Inc – SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE | |||
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SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
Rev.5.1_00
S-1009 Series
2. CMOS output product
Table 9
(Ta = +25°C unless otherwise specified)
Item
Symbol
Condition
Test
Min. Typ. Max. Unit Circuit
Detection voltage*1 âVDET
0.8 V ⤠âVDET < 2.4 V
2.4 V ⤠âVDET ⤠4.6 V
âVDET(S)
â 0.012
âVDET(S)
âVDET(S)
+ 0.012
V
1
âVDET(S)
à 0.995
âVDET(S)
âVDET(S)
à 1.005
V
1
Hysteresis width VHYS
â
âVDET âVDET âVDET
à 0.04 à 0.05 à 0.06
V
1
Current
consumption
ISS
Operation voltage VDD
Output current
IOUT
0.8 V ⤠âVDET < 1.2 V â
0.30 0.90 μA 2
VDD = +VDET + 0.6 V
1.2 V ⤠âVDET < 2.3 V
2.3 V ⤠âVDET < 3.6 V
â
â
0.27 0.90 μA 2
0.42 0.90 μA 2
3.6 V ⤠âVDET ⤠4.6 V â
0.39 0.90 μA 2
â
0.6
â
10.0
V
1
Output transistor
Nch
VDS*2 = 0.5 V
VDD = 0.7 V
S-1009C08 to 14
VDD = 1.2 V
S-1009C15 to 46
VDD = 2.4 V
S-1009C27 to 46
0.14 0.40
â
0.73 1.33
â
1.47 2.39
â
mA 3
mA 3
mA 3
Output transistor
Pch
VDS*2 = 0.5 V
VDD = 4.8 V
S-1009C08 to 39
VDD = 6.0 V
S-1009C40 to 46
1.62 2.60
â
1.78 2.86
â
mA 5
mA 5
Delay time
Detection voltage
temperature
coefficient*3
tD
ÎâVDET
ÎTa ⢠âVDET
CD = 4.7 nF
Ta = â40°C to +85°C
0.8 V ⤠âVDET < 0.9 V
0.9 V ⤠âVDET < 1.2 V
1.2 V ⤠âVDET ⤠4.6 V
22.1
â
â
â
26.0
±180
±120
±100
29.9 ms 4
±430 ppm/°C 1
±370 ppm/°C 1
±350 ppm/°C 1
*1. âVDET: Actual detection voltage value, âVDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 3.)
*2. VDS: Drain-to-source voltage of the output transistor
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Î â VDET
ÎTa
[mV/°C]*1 = âVDET(S) (typ.)[V]*2 Ã
Î â VDET
ÎTa ⢠âVDET
[ppm/°C]*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
9
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