S1009 Datasheet, PDF (8/43 Pages) Seiko Instruments Inc – SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE

SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
S-1009 Series
Rev.5.1_00
„ Electrical Characteristics
1. Nch open-drain output product
Table 8
(Ta = +25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage^*1 −V_DET
0.8 V ≤ −V_DET < 2.4 V
2.4 V ≤ −V_DET ≤ 4.6 V
−V_DET(S)
− 0.012
−V_DET(S)
−V_DET(S)
+ 0.012
V
1
−V_DET(S)
× 0.995
−V_DET(S)
−V_DET(S)
× 1.005
V
1
Hysteresis width V_HYS
−
−V_DET −V_DET −V_DET
× 0.04 × 0.05 × 0.06
V
1
Current
consumption
I_SS
Operation voltage V_DD
Output current
I_OUT
0.8 V ≤ −V_DET < 1.2 V −
0.30 0.90 μA 2
V_DD = +V_DET + 0.6 V
1.2 V ≤ −V_DET < 2.3 V
2.3 V ≤ −V_DET < 3.6 V
−
−
0.27 0.90 μA 2
0.42 0.90 μA 2
3.6 V ≤ −V_DET ≤ 4.6 V −
0.39 0.90 μA 2
−
0.7
−
10.0
V
1
Output transistor
Nch
V_DS^*2 = 0.5 V
V_DD = 0.7 V
S-1009N08 to 14
V_DD = 1.2 V
S-1009N15 to 46
V_DD = 2.4 V
S-1009N27 to 46
0.14 0.40
−
0.73 1.33
−
1.47 2.39
−
mA 3
mA 3
mA 3
Output transistor
Leakage current
Delay time
Detection voltage
temperature
coefficient^*3
I_LEAK
t_D
Δ−V_DET
ΔTa • −V_DET
Nch
V_DD = 10.0 V, V_OUT = 10.0 V
C_D = 4.7 nF
0.8 V ≤ −V_DET < 0.9 V
Ta = −40°C to +85°C 0.9 V ≤ −V_DET < 1.2 V
1.2 V ≤ −V_DET ≤ 4.6 V
−
22.1
−
−
−
−
26.0
±180
±120
±100
0.08 μA 3
29.9 ms 4
±430 ppm/°C 1
±370 ppm/°C 1
±350 ppm/°C 1
*1. −V_DET: Actual detection voltage value, −V_DET(S): Set detection voltage value (the center value of the detection voltage
range in Table 2.)
*2. V_DS: Drain-to-source voltage of the output transistor
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − V_DET
ΔTa
[mV/°C]^*1 = −VDET(S) (typ.)[V]^*2 ×
Δ − V_DET
ΔTa • −V_DET
[ppm/°C]^*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
8
Seiko Instruments Inc.