S-19100N12H-M5T2U Datasheet, PDF (8/45 Pages) Seiko Instruments Inc – BUILT-IN DELAY CIRCUIT

FOR AUTOMOTIVE 105°C OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
S-19100xxxH Series
Rev.2.0_01
 Electrical Characteristics
1. Nch open-drain output product
Table 9
(Ta = −40°C to +105°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage^*1 −VDET
1.2 V ≤ −VDET < 2.4 V
2.4 V ≤ −VDET ≤ 4.6 V
−VDET(S)
−VDET(S)
× 0.98 −VDET(S) × 1.02
V
1
− 0.012
+ 0.012
−VDET(S)
× 0.975
−VDET(S)
−VDET(S)
× 1.025
V
1
Hysteresis width
VHYS
−
−VDET −VDET −VDET
× 0.03 × 0.05 × 0.07
V
1
Current consumption ISS
Operation voltage VDD
Output current
IOUT
1.2 V ≤ −VDET < 2.3 V −
0.27 1.10
μA
2
VDD = +VDET + 0.6 V 2.3 V ≤ −VDET < 3.6 V −
0.42 1.20
μA
2
3.6 V ≤ −VDET ≤ 4.6 V −
0.39 1.20
μA
2
−
0.8
−
10.0
V
1
Output transistor
Nch
VDS^*2 = 0.5 V
VDD = 0.7 V
S-19100N12 to 14
0.14 0.40
−
VDD = 1.2 V
S-19100N15 to 46
0.73 1.33
−
VDD = 2.4 V
S-19100N27 to 46
1.17 2.39
−
mA 3
mA 3
mA 3
Output transistor
Leakage current
Delay time
ILEAK
tD
Nch
VDD = 10.0 V, VOUT = 10.0 V
CD = 4.7 nF
−
−
1.20
μA
3
12.0 26.0 57.0
ms
4
*1. −VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (The center value of the detection voltage
range in Table 2.)
*2. VDS: Drain-to-source voltage of the output transistor
8