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S-19100N12H-M5T2U Datasheet, PDF (27/45 Pages) Seiko Instruments Inc – BUILT-IN DELAY CIRCUIT
FOR AUTOMOTIVE 105°C OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
Rev.2.0_01
S-19100xxxH Series
3. Change of detection voltage (Nch open-drain output product only)
If there is not a product with a specified detection voltage value in the S-19100NxxH Series, the detection voltage
can be changed by using a resistance divider or a diode, as seen in Figure 31 and Figure 32.
In Figure 31, the hysteresis width also changes.
VDD
RA*1
(RA ≤ 100 kΩ)
VIN
S-19100N
R
100 kΩ
OUT
VDD
Vf1
VIN
S-19100N
R
100 kΩ
OUT
RB
VSS
(Nch open-drain
ouput product)
VSS
(Nch open-drain
output product)
Detection voltage =
RA + RB
RB
• −VDET
Hysteresis width =
RA + RB
RB
• VHYS
*1. RA should be 100 kΩ or less to prevent oscillation.
Caution
If RA and RB are large, the hysteresis width
may also be larger than the value given by
the above equation due to the feed-through
current.
Figure 31
Detection voltage = Vf1 + (−VDET)
Figure 32
Caution 1. The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
2. Note that the hysteresis width may be larger as the following equation shows when using the
above connections. Perform thorough evaluation using the actual application to set the
constant.
Maximum hysteresis width =
RA + RB
RB
• VHYS + RA • 20 μA
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