S-19100N12H-M5T2U Datasheet, PDF (20/45 Pages) Seiko Instruments Inc – BUILT-IN DELAY CIRCUIT

FOR AUTOMOTIVE 105°C OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
S-19100xxxH Series
Rev.2.0_01
7. Nch transistor output current (IOUT) vs. Input voltage (VDD)
S-19100N46
4.0
3.5
Ta = −40°C
3.0 ^{Ta = +25°C}
VDS = 0.5 V
2.5
2.0
1.5
1.0
0.5
0
0
Ta = +105°C
1.0 2.0 3.0 4.0 5.0 6.0
VDD [V]
8. Pch transistor output current (IOUT) vs. Input voltage (VDD)
S-19100C12
4.0
3.5
Ta = −40°C
3.0 ^{Ta = +25°C}
VDS = 0.5 V
2.5
2.0
1.5
Ta = +105°C
1.0
0.5
0
0
2.0 4.0 6.0 8.0 10.0
VDD [V]
9. Minimum operation voltage (VOUT) vs. Input voltage (VDD)
S-19100N12
1.6
Pull-up to VDD
Pull-up resistance: 100 kΩ
1.2
0.8
Ta = −40°C
Ta = +25°C
0.4
Ta = +105°C
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDD [V]
S-19100N46
6
5
4
3
2
1
0
0
Pull-up to VDD
Pull-up resistance: 100 kΩ
Ta = −40°C
Ta = +25°C
Ta = +105°C
1.0 2.0 3.0 4.0 5.0
VDD [V]
S-19100N12
12
Pull-up to 10 V
Pull-up resistance: 100 kΩ
10
Ta = −40°C
8
Ta = +25°C
6
Ta = +105°C
4
2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDD [V]
Remark VDS: Drain-to-source voltage of the output transistor
S-19100N46
12
10
8
6
4
2
0
0
Pull-up to 10 V
Pull-up resistance: 100 kΩ
Ta = −40°C
Ta = +25°C
Ta = +105°C
1.0 2.0 3.0 4.0 5.0
VDD [V]
20