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S-808XXC Datasheet, PDF (26/58 Pages) Seiko Instruments Inc – SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR | |||
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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.4.3_00
 Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2G, S-80824KNY-x-G
Table 18
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Detection voltage*1
Release voltage
Current consumption
Operating voltage
Output current
Leakage current
Response time
Detection voltage
temperature
coefficient*3
âVDET
+VDET
ISS
VDD
IOUT
ILEAK
tPLH


VDD=6.0 V

Output transistor, VDD = 0.95 V
Nch, VDS = 0.5 V VDD = 1.2 V
Output transistor,
Nch, VDD = 10.0 V, VDS = 10.0 V

â â VDET
âTa ⢠âVDET
Ta = â40 to 85 °C
2.295
4.300

0.95
0.03
0.23



Typ.
2.400*2
4.400
0.8

0.24
0.50


±100
Max.
2.505
4.500
2.4
10.0


0.1
60
±350
Unit
Test
circuit
V
1
V
1
µA
2
V
1
mA
3
mA
3
µA
3
µs
1
ppm/°C 1
*1. âVDET: Actual detection voltage value
*2. Specified detection voltage value (âVDET(S))
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ] ( ) â â VDET mV/°C *1 = âVDET(S) Typ. V *2 à â â VDET ppm/°C *3 ÷ 1000
âTa
âTa ⢠âVDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
26
Seiko Instruments Inc.
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