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S-808XXC Datasheet, PDF (16/58 Pages) Seiko Instruments Inc – SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.4.3_00
„ Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
Release voltage
−VDET

+VDET
S-80808
S-80809
−VDET(S) −VDET(S) −VDET(S)
×0.98
×1.02
V
1
0.802 0.834 0.867 V
1
0.910 0.944 0.979 V
1
S-80810
1.017 1.054 1.091 V
1
S-80811
1.125 1.164 1.203 V
1
S-80812
1.232 1.273 1.315 V
1
S-80813
1.340 1.383 1.427 V
1
S-80814
1.448 1.493 1.538 V
1
Hysteresis width
VHYS
S-80808
S-80809
0.018 0.034 0.051 V
1
0.028 0.044 0.061 V
1
S-80810
0.037 0.054 0.071 V
1
S-80811
0.047 0.064 0.081 V
1
S-80812
0.056 0.073 0.091 V
1
S-80813
0.066 0.083 0.101 V
1
S-80814
0.076 0.093 0.110 V
1
Current consumption
Operating voltage
Output current
Leakage current
Response time
ISS
VDD = 1.5 V S-80808 to 09 
1.3
3.5
µA
2
VDD = 2.0 V S-80810 to 14 
1.3
3.5
µA
2
VDD

0.65

5.0
V
1
IOUT
Output transistor,
Nch, VDS = 0.5 V, VDD = 0.7 V
0.04
0.2

mA 3
ILEAK
Output transistor,
Nch, VDS = 5.0 V, VDD = 5.0 V


60
nA
3
tPLH



60
µs
1
Detection voltage
temperature
coefficient*2
∆ − VDET
∆Ta • −VDET
Ta = −40 to +85 °C

±100
±350
ppm/
°C
1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ] ( ) ∆ − VDET mV/°C *1 = −VDET(S) Typ. V *2 × ∆ − VDET ppm/°C *3 ÷ 1000
∆Ta
∆Ta • −VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
16
Seiko Instruments Inc.