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S-808XXC Datasheet, PDF (17/58 Pages) Seiko Instruments Inc – SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR | |||
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Rev.4.3_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
âVDET

âVDET(S) âVDET(S) âVDET(S)
Ã0.98
Ã1.02
V
1
Hysteresis width
VHYS

âVDET
Ã0.03
âVDET
Ã0.05
âVDET
Ã0.08
V
1
Current consumption
Operating voltage
Output current
ISS
VDD = 3.5 V
S-80815 to 26 
0.8
2.4 µA 2
VDD = 4.5 V
S-80827 to 39 
0.8
2.4 µA 2
VDD = 6.0 V
S-80840 to 56 
0.9
2.7 µA 2
VDD = 7.5 V
S-80857 to 60 
0.9
2.7 µA 2
VDD

0.95

10.0 V 1
IOUT
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
0.59
1.36
 mA 3
VDD = 2.4 V
S-80827 to 60
2.88
4.98
 mA 3
Leakage current
ILEAK
Output transistor,
Nch, VDS = 10.0 V, VDD = 10.0 V


100 nA 3
Response time
tPLH



60 µs 1
Detection voltage
temperature
coefficient*2
â â VDET
âTa ⢠âVDET
Ta = â40 to +85 °C

±100
±350
ppm/
°C
1
*1. âVDET: Actual detection voltage value, âVDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ] ( ) â â VDET mV/°C *1 = âVDET(S) Typ. V *2 à â â VDET ppm/°C *3 ÷ 1000
âTa
âTa ⢠âVDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
17
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