HYM641010GS-60- Datasheet, PDF (9/11 Pages) Siemens Semiconductor Group – 1M x 64-Bit Dynamic RAM Module

HYM 641010/20GS-60/-70
1M x 64 Module
AC Characteristics (cont’d)(note: 5,6,7,8)
T_A = 0 to 70 °C,V_CC = 5.0 ± 10 %
Parameter
Symbol
-60
min. max.
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time t_PRWC
82
–
CAS precharge to WE
t_CPWD
57
–
-70
min. max.
97 –
67 –
Unit Note
ns 11
ns 11,21
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
12 –
CAS hold time
t_CHR
8
–
RAS to CAS precharge time
t_RPC
5
–
Write to RAS precharge time
t_WRP
12 –
Write hold time referenced to RAS
t_WRH
8
–
12 –
8
–
5
–
12 –
8
–
ns 11
ns 10
ns
ns 11
ns 10
Presence Detect Read Cycle
PDE to valid presence detect data
t_PD
–
10
ns
PDE inactive to presence detects
t_PDOFF
0
10
ns
inactive
Semiconductor Group
9