HYM641010GS-60- Datasheet, PDF (8/11 Pages) Siemens Semiconductor Group – 1M x 64-Bit Dynamic RAM Module

HYM 641010/20GS-60/-70
1M x 64 Module
AC Characteristics (cont’d)(note: 5,6,7,8)
T_A = 0 to 70 °C,V_CC = 5.0 ± 10 %
Parameter
Symbol
-60
min. max.
CAS delay time from Din
Data to OE low delay
CAS high to data delay
OE high to data delay
t_DZC
t_DZO
t_CDD
t_ODD
0
–
0
–
20 –
20 –
-70
min. max.
0
–
0
–
25 –
25 –
Unit Note
ns 18
ns 18
ns 9,19
ns 9,19
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
t_WCH
t_WP
t_WCS
t_RWL
t_CWL
t_DS
t_DH
15 –
10 –
2
–
20 –
15 –
-2
–
15 –
15 –
10 –
2
–
25 –
20 –
-2
–
20 –
ns 9
ns
ns 11,20
ns 9
ns
ns 10,21
ns 9,21
Read-Modify-Write Cycle
Read-write cycle time
t_RWC
155 –
RAS to WE delay time
t_RWD
82 –
CAS to WE delay time
t_CWD
37 –
Column address to WE delay time
t_AWD
52 –
OE command hold time
t_OEH
13 –
185 –
97 –
47 –
62 –
18 –
ns 9
ns 11,21
ns 11,21
ns 11,21
ns 10
Fast Page Mode Cycle
Fast page mode cycle time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
t_PC
40 –
45 –
ns
t_CPA
–
40 –
45
ns 9,13
t_RAS
60 200k 70 200k ns
t_RHCP
40
–
45 –
ns 9
Semiconductor Group
8