HYM641010GS-60- Datasheet, PDF (1/11 Pages) Siemens Semiconductor Group – 1M x 64-Bit Dynamic RAM Module

1M × 64-Bit Dynamic RAM Module
HYM 641010GS-60/-70
HYM 641020GS-60/-70
Advanced Information
• 1 048 576 words by 64-bit organization
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 9680 mW active (-60 version)
max. 8800 mW active (-70 version)
CMOS – 451 mW standby
TTL – 550 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• Byte Write Capability
• 16 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs except RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes sixteen 1M × 4 -DRAMs (HYB 514400BJ/BT) and
four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two version : HYM 641010GS with SOJ-components (8.89 mm module thickness)
HYM 641020GS with TSOPII-components (4.06 mm module thickness)
• 1024 refresh cycles / 16 ms
• Optimized for use in byte-write non-parity applications
• Gold contact pads,double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
12.95