HYM641010GS-60- Datasheet, PDF (2/11 Pages) Siemens Semiconductor Group – 1M x 64-Bit Dynamic RAM Module

HYM 641010/20GS-60/-70
1M x 64 Module
The HYM 641010/20GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 64-
bit in a 168-pin, dual read-out, single-in-line package comprising sixteen HYB 514400BJ/BT 1M
× 4 DRAMs in 300 mil wide SOJ or TSOPII - packages mounted together with sixteen 0.2 µF
ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using
four BiCMOS 8-bit buffers/line drivers.
Each HYB 514400BJ/BT is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Type
HYM 641020GS-60
HYM 641020GS-70
HYM 641010GS-60
HYM 641010GS-70
Ordering Code
Q67100 - Q2003
on request
Q67100 - Q2002
on request
Package
L-DIM-168-1
L-DIM-168-1
L-DIM-168-1
L-DIM-168-1
Descriptions
60 ns DRAM module
70 ns DRAM module
60 ns DRAM module
70 ns DRAM module
Pin Names
A0-A9,B0
DQ0 - DQ63
RAS0, RAS2
CAS0 - CAS7
WE0, WE2
OE0, OE2
Vcc
Vss
PD1 - PD8
PDE
ID0 , ID1
N.C.
Address Input
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Output Enable
Power (+5 Volt)
Ground
Presence Detect Pins
Presence Detect Enable
ID indentification bit
No Connection
Presence-Detect and ID-pin Truth Table:
Module
ID0 ID1 PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8
HYM 641010/20GS-60 Vss Vss 0
0
1
0
0
1
1
1
HYM 641010/20GS-70 Vss Vss 0
0
1
0
0
0
1
1
Note: 1 = high level ( driver output), 0 = low level ( driver output) for PDE active ( ground) . For PDE at a high level
all PD terminals are in tri-state.
Semiconductor Group
2