HYM641010GS-60- Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – 1M x 64-Bit Dynamic RAM Module

HYM 641010/20GS-60/-70
1M x 64 Module
DC Characteristics (cont’d) ¹⁾
Parameter
Symbol
Average V_CC supply current during fast
I_CC4
page mode:
HYM 641010/20GS-60
HYM 641010/20GS-70
Limit Values
min.
max.
–
1120
–
1120
(RAS = V_IL, CAS, address cycling
t_PC = t_PC min.)
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
Average V_CC supply current during
I_CC6
CAS-before-RAS refresh mode:
HYM 641010/20GS-60
–
HYM 641010/20GS-70
–
30
1760
1600
(RAS, CAS cycling, t_RC = t_RC min.)
Unit Test
Condition
2), 3)
mA
mA
mA –
1)
mA
mA
Capacitance
T_A = 0 to 70 °C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9,B0)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0-CAS7)
Input capacitance (WE0,WE2,OE0,OE2)
I/O capacitance (DQ0-DQ63)
Symbol
C_I1
C_I2
C_I3
C_I4
C_IO1
Limit Values
min.
max.
–
10
–
50
–
15
–
15
–
15
Unit
pF
pF
pF
pF
pF
Semiconductor Group
6