HYB514256B Datasheet, PDF (9/22 Pages) Siemens Semiconductor Group – 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K × 4-DRAM
AC Characteristics (cont’d) ^{4) 13)}
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
-50
min. max.
CAS precharge time (CAS- t_CPT
before-RAS counter test
cycle)
25 –
OE access time
t_OEA
RAS hold time referenced to t_ROH
OE
– 15
10 –
Output buffer turn-off delay t_OEZ
time from OE
Data to CAS low delay ¹⁴⁾
t_DZC
CAS high to data delay ¹⁵⁾
t_DZO
OE high to data delay ¹⁵⁾
t_CDD
OE to data delay ¹⁵⁾
t_ODD
0 15
0–
0–
15 –
15 –
Limit Values
-60
min. max.
30 –
-70
min. max.
40 –
– 15
10 –
0 20
0–
0–
20 –
20 –
– 20
10 –
0 20
0–
0–
20 –
20 –
Unit
ns
ns
ns
ns
ns
ns
ns
Capacitance
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A8)
Input capacitance (RAS, CAS, WE, OE)
Output capacitance (I/O1 ... I/O4)
Symbol
C_I1
C_I2
C_5O
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
63