HYB514256B Datasheet, PDF (6/22 Pages) Siemens Semiconductor Group – 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K × 4-DRAM
DC Characteristics (cont’d)
T_A = 0 to 70 ˚C; V_SS = 0 V; V_CC = 5 V ± 10 %
Parameter
Average V_CC supply current, fast page mode:
-60 version
-70 version
-50 version
(RAS = V_IL , CAS, address cycling:
t_PC = t_PC min.)
Standby V_CC supply current
L-Version
(RAS = CAS = V_CC – 0.2 V)
Average V_CC supply current, CAS-before-RAS
refresh mode:
-50 version
-60 version
-70 version
(RAS, CAS cycling: t_RC = t_RC min.)
For L-version only:
Battery backup current:
average power supply current,
battery backup mode:
(CAS = CAS before RAS cycling or 0.2 V,
OE = V_CC – 0.2 V
WE = V_CC – 0.2 V or 0.2 V,
A0 to A8 = V_CC – 0.2 V or 0.2 V,
I/O1 to I/O4 = V_CC – 0.2 V or 0.2 V or open,
t_RC = 125 µs, t_RAS = t_RAS min. ~ 1 µs)
Symbol Limit Values
min.
max.
I_CC4
–
70
–
60
–
50
I_CC5
–
1
–
200
I_CC6
–
90
–
80
–
70
I_CC7
–
300
Unit Test
Condition
mA ^{2) 3}
mA ^{2) 3)}
mA ^{2) 3)}
mA ¹⁾
µA ¹⁾
mA ²⁾
mA ²⁾
mA ²⁾
2)
µA
Semiconductor Group
60