HYB514256B Datasheet, PDF (13/22 Pages) Siemens Semiconductor Group – 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K × 4-DRAM
V
RAS
IH
VIL
V
IH
CAS
VIL
V
IH
A0 - A8
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O1-I/O4 ^IH
(Inputs) _VIL
V
I/O1-I/O4 ^OH
(Outputs) _VOL
tRC
tRAS
tRP
tCSH
tRCD
tRSH
tCAS
tASR
tRAD
tASC
tRAL
tCAH
Row
Address
t_RAH
Column
Address
tCWL
tRWL
tWP
tCRP
tASR
.
Row
Address
tOEH
tDZO
tDZC
tODD
tDS ^tDH
tOEZ
tCLZ
tOEA
Hi-Z
Valid Data
Hi-Z
“H” or “L”
Write Cycle (OE Controlled Write)
Semiconductor Group
67