HYB514256B Datasheet, PDF (14/22 Pages) Siemens Semiconductor Group – 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K × 4-DRAM
V
RAS
IH
VIL
CAS
V
IH
VIL
A0 - A8
V
IH
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O1-I/O4 ^IH
(Inputs) VIL
V
I/O1-I/O4 ^OH
(Outputs) VOL
tRWC
tRAS
tRP
tRCD
tCSH
tRSH
tCAS
tCRP
tASR
t_RAH
tASC
tCAH
Row
Address
Column
Address
tRAD
tAWD
tCWD
tRWD
tASR
tCWL
tRWL
tWP
Row
Address
tRCS
tAA
tOEA
tOEH
tDZC
tDZO
tCLZ
tCAC
tRAC
tDS
tODD
tDH
Valid
Data in
tOEZ
Data
Out
“H” or “L”
Read-Write (Read-Modify-Write) Cycle
Semiconductor Group
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