HYB5117805BSJ-50- Datasheet, PDF (9/25 Pages) Siemens Semiconductor Group – 2M x 8 - Bit Dynamic RAM 2k Refresh

HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
16E
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read- t_PRWC 58 –
68 –
77 –
ns
write cycle time
CAS precharge to WE
t_CPWD 41 –
49 –
56 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
10 –
10 –
10 –
ns
CAS hold time
t_CHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10 –
10 –
10 –
ns
Write hold time referenced to RAS t_WRH 10 –
10 –
10 –
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time (CAS-
t_CPT
35 –
40 –
40 –
ns
before-RAS counter test cycle)
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
Test Mode
Write command setup time
Write command hold time
CAS hold time
t_RASS
t_RPS
t_CHS
100k –
95 –
-50 –
100k –
110 –
-50 –
100k –
130 –
-50 –
ns 17
ns 17
ns 17
t_WTS
10 –
10 –
10 –
ns
t_WTH
10 –
10 –
10 –
ns
t_CHRT
30
–
30 –
30 –
ns
Semiconductor Group
9