HYB5117805BSJ-50- Datasheet, PDF (5/25 Pages) Siemens Semiconductor Group – 2M x 8 - Bit Dynamic RAM 2k Refresh

HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 V ± 10 %; t_T = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
V_IH
Input low voltage
V_IL
Output high voltage (I_OUT = – 5 mA)
V_OH
Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current
I_I(L)
(0 V ≤ V_IH ≤ Vcc + 0.3V, all other pins = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V ≤ V_OUT ≤ Vcc + 0.3V)
Average V_CC supply current:
I_CC1
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling: t_RC = t_RC min.)
Standby V_CC supply current (RAS = CAS = V_IH) I_CC2
Average V_CC supply current, during RAS-only I_CC3
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
(RAS cycling, CAS = V_IH, t_RC = t_RC min.)
2.4
– 0.5
2.4
–
– 10
– 10
Vcc+0.5
0.8
–
0.4
10
10
–
120
–
110
–
100
–
2
–
120
–
110
–
100
Unit Test
Condition
V ¹⁾
V ¹⁾
V ¹⁾
V ¹⁾
µA ¹⁾
µA ¹⁾
mA ^{2) 3) 4)}
mA ^{2) 3) 4)}
mA ^{2) 3) 4)}
mA –
mA ^{2) 4)}
mA ^{2) 4)}
mA ^{2) 4)}
Semiconductor Group
5