HYB5117805BSJ-50- Datasheet, PDF (8/25 Pages) Siemens Semiconductor Group – 2M x 8 - Bit Dynamic RAM 2k Refresh

HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
16E
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Data to CAS low delay
Data to OE low delay
CAS high to data delay
OE high to data delay
t_DZC
t_DZO
t_CDD
t_ODD
0
–
0
–
10 –
10 –
0–
0–
13 –
13 –
0
–
0
–
15 –
15 –
ns 13
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
8
–
8
–
0
–
13 –
13 –
0
–
8
–
10 –
10 –
0–
15 –
15 –
0–
10 –
10 –
10 –
0
–
17 –
17 –
0
–
12 –
ns
ns
ns 15
ns
ns
ns 16
ns 16
Read-modify-Write Cycle
Read-write cycle time
t_RWC
RAS to WE delay time
t_RWD
CAS to WE delay time
t_CWD
Column address to WE delay time t_AWD
OE command hold time
t_OEH
113 –
64 –
27 –
39 –
10 –
138 –
77 –
32 –
47 –
13 –
162 –
89 –
36 –
54 –
15 –
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle t_HPC
20
time
CAS precharge time
t_CP
8
Access time from CAS precharge t_CPA
–
Output data hold time
t_COH
5
RAS pulse width in EDO mode t_RAS
50
CAS precharge to RAS Delay
t_RHPC 27
– 25
– 10
27 –
–5
200k 60
– 32
–
30
–
10
32 –
–
5
200k 70
–
37
– ns
– ns
37 ns 7
– ns
200k ns
– ns
Semiconductor Group
8