HYB5117805BSJ-50- Datasheet, PDF (1/25 Pages) Siemens Semiconductor Group – 2M x 8 - Bit Dynamic RAM 2k Refresh

2M x 8 - Bit Dynamic RAM
2k Refresh
(Hyper Page Mode- EDO)
HYB5117805BSJ -50/-60/-70
Advanced Information
• 2 097 152 words by 8-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
84 104 124 ns
20 25 30 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms (2k-Refresh)
• Plastic Package:
P-SOJ-28-3 400 mil
Semiconductor Group
1
1.96